Semiconductor device

A semiconductor device comprising:

• a plurality of contact regions formed in areas exposing at a surface of a semiconductor substrate at a certain interval;
• an insulating film provided on the surface of the semiconductor substrate between adjacent contact regions;
• a surface electrode provided on an upper side of the semiconductor substrate and electrically connected to each of the contact regions;
• and
• a stress relaxation portion provided on at least one part of an upper surface, an inside and a lower surface of the surface electrode in an area above the contact regions and not covered with the insulating film,
• wherein the stress relaxation portion is formed of a first conductive material, and
• a Young's modulus of the first conductive material of the stress relaxation portion is lower than a Young's modulus of a material of the surface electrode;
• the semiconductor device further comprising:
• a conductive portion formed of a second conductive material and between the surface electrode and the stress relaxation portion,
• wherein a Young's modulus of the second conductive material is lower than the Young's modulus of the surface electrode and higher than the Young's modulus of the first conductive material.

A semiconductor device comprising:

• a plurality of contact regions formed in areas exposing at a surface of a semiconductor substrate at a certain interval;
• a drift region formed in an area exposing at the surface of the semiconductor substrate between adjacent contact regions;
• planar gate electrodes provided on an upper side of the semiconductor substrate, opposing a part of the adjacent contact regions and opposing the drift region;
• a surface electrode provided on the upper side of the semiconductor substrate and electrically connected to a part of the contact regions;
• and
• a stress relaxation portion provided on at least one part of an upper surface and an inside of the surface electrode in an area above a region between adjacent planar gate electrodes and in which the planar gate electrodes are not provided,
• wherein the stress relaxation portion is formed of a first conductive material, and
• a Young's modulus of the first conductive material is lower than a Young's modulus of a material of the surface electrode.