US 2011/0298033 A1 · SEMICONDUCTOR STORAGE DEVICE

Abstract

According to one embodiment, a semiconductor storage device includes a charge storage layer, a control gate. The charge storage layer is formed above a semiconductor substrate with first insulating film disposed therebetween. The control gate is formed above the charge storage layer with second insulating film disposed therebetween. The control gate includes a nickel silicide region. The side surface expands outwardly in at least a partial region thereof, and height of the control gate from a portion at which the side surface thereof starts to expand outwardly to a top of the control gate is greater than maximum width of the control gate in a region above the portion at which the side surface starts to expand outwardly.

Claims20

Dependent claims

A semiconductor storage device comprising:

a charge storage layer formed above a semiconductor substrate with first insulating film disposed therebetween;
and
a control gate formed above the charge storage layer with second insulating film disposed therebetween, the control gate including a nickel silicide region,
wherein side surface of the control gate expands outwardly in at least a partial region thereof, and height of the control gate from a portion at which the side surface thereof starts to expand outwardly to a top of the control gate is greater than maximum width of the control gate in a region above the portion at which the side surface starts to expand outwardly.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/051,355Filed 18 Mar 2011

Priority

JP 2010-1500413 Jun 2010

Published

8 Dec 2011

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10B 41/30
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the memory core region
H10B 41/35
Characterised by the memory core region: with a cell select transistor, e.g. NAND
H10D 30/683
Having only two programming levels: programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
G11C 16/0483
Using variable threshold transistors, e.g. FAMOS: comprising cells having several storage transistors connected in series

Semiconductor storage device

Life of this patent

Semiconductor storage device

Life of this patent

Abstract

Claims20