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AssigneeNational Tsing Hua University
InventorsJenn-Chang HWANG, Chwung-Shan KOU, Jian-You LIN
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The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.
A Schottky diode with a diamond rod, comprising:
A method for manufacturing a Schottky diode with a diamond rod, comprising the following steps:
Dependencies are inferred from the claim text.