Insulation material for integrated circuits and use of said integrated circuits
AssigneeLeibniz-Institut FüR FestköRper-Und Werkstofforschung Dresden E.V.
InventorsGotthart Seifert, Helmut Hermann, Konstyantyn Zagorodniy, Ehrenfried Zschech
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Abstract
The invention relates to the fields of microelectronics and materials sciences and concerns an insulation layer material for integrated circuits in microelectronics, which can be used, for example, in integrated circuits as insulation material in semiconductor components. The object of the present invention is to disclose an insulation material for integrated circuits, which has dielectric constants of k≦2 with good mechanical properties at the same time. The object is attained with an insulation material for integrated circuits, containing at least MOFs and/or COFs.
Claims15
Insulation material for integrated circuits, containing at least MOFs and/or COFs.
Use of MOFs and/or COFs as insulator material with dielectric constants of k≦2 for integrated circuits.
Dependencies are inferred from the claim text.