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US 2011/0297227 A1Published application
Hetero solar cell and method for producing hetero solar cells
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsDamian Pysch, Stefan Glunz
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Abstract
The invention relates to a hetero solar cell which comprises silicon, doped silicon layers and tunnel passivation layers. This is concluded by an indium-tin oxide layer on the front-side and by an aluminium layer on the rear-side. Furthermore, the invention relates to a method for producing hetero solar cells.
Claims19
A hetero solar cell comprising:
- an emitter which is disposed on the front-side surface of a crystalline, doped silicon wafer (c-Si layer) and is made of an amorphous silicon layer (a-Si layer) doped oppositely to the c-Si layer and also an ITO layer disposed thereon with front-side contact and a metallisation layer disposed on the rear-side surface,
- wherein a tunnel passivation layer is applied at least between the front-side surface of the c-Si layer and the emitter layer.
A method for producing a hetero solar cell comprising:
- disposing an emitter on a front side surface of a crystalline, doped silicon wafer (c-Si layer), wherein the emitter includes an amorphous silicon layer (a-Si layer) doped oppositely to the c-Si layer and also an ITO layer disposed thereon with front-side contact and a metallisation layer disposed on the rear-side surface;
- and
- applying a tunnel passivation layer at least between the front-side surface of the c-Si layer and the emitter layer, wherein the at least one tunnel passivation layer is deposited by means of atomic layer deposition or similarly-operating PECVD technology.
Dependencies are inferred from the claim text.