Plasma processing apparatus and sample stage

A plasma processing apparatus in which a wafer is placed on a sample stage disposed in a processing chamber in a vacuum vessel and the wafer is processed by use of plasma generated in the processing chamber, comprising:

• a metallic basic material arranged in the sample stage;
• a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process;
• a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process;
• an adhesive layer arranged on the dielectric film;
• a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer;
• a sensor disposed in the basic material for sensing a temperature;
• and
• a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.