Ald of metal silicate films
AssigneeASM America, Inc.
InventorsChang-Gong Wang, Eric Shero, Glen Wilk
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Abstract
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
Claims15
An atomic layer deposition (ALD) method for forming a metal silicate film on a substrate in a reaction space, comprising:
- a first deposition cycle comprising:
- contacting the substrate with a vapor phase pulse of an oxidizing agent;
- removing excess oxidizing agent from the reaction space;
- contacting the substrate with a vapor phase pulse of a metal halide,
- wherein the metal comprises hafnium and/or zirconium;
- and
- removing excess metal halide from the reaction space;
- and
- a second deposition cycle comprising:
- contacting the substrate with a vapor phase pulse of an oxidizing agent;
- removing excess oxidizing agent from the reaction space;
- contacting the substrate with a vapor phase pulse of a silicon halide;
- and
- removing excess silicon halide from the reaction space;
- wherein the first deposition cycle is repeated one or more times;
- wherein the second deposition cycle is repeated a one or more times after the first deposition cycle.
An atomic layer deposition (ALD) method for forming a metal silicate film, the method comprising a plurality of cycles, each cycle comprising contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a silicon halide source chemical, a metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon halide source chemical.
Dependencies are inferred from the claim text.