Etchant for electrode and method of fabricating thin film transistor array panel using the same

A method for manufacturing a thin film transistor array panel comprising:

• providing a gate line including a gate electrode;
• providing a data line which is insulated from the gate line;
• and
• providing a semiconductor overlapping the gate electrode,
• wherein at least one of providing the gate line and providing the data line comprises:
• depositing a multilayer which comprises copper;
• and
• etching all layers of the multilayer substantially simultaneously,
• wherein the etching all layers of the multilayer substantially simultaneously uses an etchant which comprises hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.