Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
AssigneeSoraa, Inc.
InventorsMark P. D`Evelyn, James S. Speck
Life of this patent
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Abstract
A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.
Claims39
A method for forming a gallium based crystal, comprising:
- providing a proto-seed, the proto-seed comprising a gallium based crystal with a maximum length of at least 25 mm and a first thickness substantially orthogonal to a first direction of the maximum length and a second thickness orthogonal to the first direction of the maximum length, each of the first thickness and the second thickness being at least 0.3 mm;
- and
- subjecting the proto-seed to an ammonothermal growth of a gallium based crystalline material to cause the proto-seed to grow in a second direction lateral to the first direction of maximum length by a distance of at least 5 mm to form at least one a-wing, comprising a c+ surface and a c-surface, each of the c+ surface and the c-surface having an area of at least 25 mm2.
A method for forming a gallium based crystal, comprising:
- providing a laterally grown gallium based seed crystal, the laterally grown gallium based seed crystal having a maximum length of at least 25 mm and a first thickness substantially orthogonal to a first direction of the maximum length and a second thickness orthogonal to the first direction of the maximum length, each of the first thickness and the second thickness being at least 0.3 mm;
- and
- subjecting the laterally grown gallium based seed crystal to an ammonothermal growth of a gallium based crystalline material to cause the laterally grown gallium based seed crystal to grow in a second direction lateral to the first direction of maximum length by a distance of at least 5 mm to form a c-grown crystal comprising two large-area m-orientation surfaces, each of the m-surfaces having an area of at least 25 mm2.
A gallium based crystal device comprising at least four m-plane faces and two c-plane faces;
- wherein the two c-plane faces are substantial major planes in association with any of the four m-plane faces.
A seed crystal device for use in electronic or optical devices, the seed crystal device comprising:
- a seed crystal structure removed from a thickened gallium and nitrogen containing substrate provided from an HVPE grown material;
- wherein the thickened gallium and nitrogen substrate is at least 500 microns thick.
A gallium and nitrogen crystalline structure comprising a laterally grown gallium and nitrogen containing material having a dislocation density of 105 cm−2 and less for a major surface and a major length of 12 mm and greater, the major length associated with the major surface.
Dependencies are inferred from the claim text.