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US 2011/0256685 A1Published application
Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorsTakahiro SUZUKI, Kouta NOSAKA, Katuyuki OKAMASU, Akira MURAKAMI, Katuhiko KAWASUMI
Life of this patent
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Abstract
A film structure including at least one film is formed on a face of a semiconductor substrate and then a first mask with a pattern is formed on the film structure. A second mask is formed so as to cover the first mask over a bevel region. The film structure is etched using the first and second masks and thereafter the remaining first and second masks are removed away.
Claims20
A method of manufacturing a semiconductor device, comprising:
- preparing a semiconductor substrate;
- forming a film structure comprising at least one film on a primary face comprising a bevel region of the semiconductor substrate;
- forming a first mask with a pattern on a face of the film structure;
- forming a second mask over the bevel region so as to cover the first mask;
- etching the film structure using the first and second masks so that the film structure remains in the bevel region and a region of the semiconductor substrate other than the bevel region;
- and
- removing the first and second masks which remain.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a semiconductor substrate;
- sequentially depositing a carbon film and an anti-reflection film on a face of the interlayer insulating film and then patterning the deposited films, to form a first mask;
- removing the anti-reflection film over a bevel region of the semiconductor substrate, to expose the carbon film;
- forming a second mask containing a negative photoresist film so as to cover a portion of an exposed carbon film in the bevel region of the semiconductor substrate;
- performing a dry etching using a mask pattern formed in the first mask, to pattern the interlayer insulating film in a region not covered with the second mask;
- and
- removing the first and second masks which remain.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a semiconductor substrate;
- sequentially depositing a carbon film and an anti-reflection film on a face of the interlayer insulating film and then patterning the deposited films, to form a first mask;
- forming a second mask containing negative photoresist on the first mask over a bevel region of the semiconductor substrate;
- patterning the interlayer insulating film using the first and second masks as a mask;
- removing the anti-reflection layer in a region of the semiconductor substrate not covered with the second mask;
- removing the carbon film in a region of the semiconductor substrate not covered with the second mask, and removing a portion of the second mask to expose the anti-reflection layer over the bevel region;
- removing the anti-reflection layer exposed over the bevel region;
- and
- removing the carbon film and the second mask remaining over the bevel region.
6 more elements
Dependencies are inferred from the claim text.