Two-way Halo Implant
AssigneeKabushiki Kaisha Toshiba
InventorKatsura Miyashita
Life of this patent
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Abstract
A system and method for ion implantation during semiconductor fabrication. An integrated circuit may be designed with proximately located one-directional transistor gates. A two-way halo ion implantation is performed perpendicularly to the transistor gates in order to embed the dopant into the silicon body on the surface of the semiconductor wafer. The two-way halo both reduces the channeling effect by allowing ion implantation beneath the transistor gate, and reduces the halo shadowing effect resulting from halo implanting which is done parallel to the transistor gates.
Claims6
A method for manufacturing a semiconductor device, comprising:
- forming a conductive layer on a top surface of a silicon layer, the conductive layer having a width and a length, wherein the length of the conductive layer extends along an axis and is longer than the respective width;
- forming a layer of resist on said conductive layer;
- directing a first ion stream toward the silicon layer at a first angle not normal to the top surface of the silicon layer, said first angle being perpendicular to the axis;
- directing a second ion stream toward the silicon layer at a second angle not normal to the top surface of the silicon layer, said second angle being perpendicular to the axis, wherein said second ion stream originates from an opposite side of the axis from which the first ion stream originates;
- and
- removing at least some of said layer of resist from said conductive layer, wherein only two ion streams are directed toward the silicon layer between steps of forming said layer of resist and removing at least of the said layer of resist.
Dependencies are inferred from the claim text.