US 2011/0256667 A1Published application

Stacked wafer manufacturing method

AssigneeDisco Corporation

InventorsAkihito Kawai, Koichi Kondo

Life of this patent

Estimating the term…

Loading patent…

Abstract

A manufacturing method for a stacked wafer configured by bonding a mother wafer having a plurality of first semiconductor device and a stacking wafer having a plurality of second semiconductor devices. The manufacturing method includes the steps of attaching a protective member to the front side of the stacking wafer to protect the second semiconductor devices, next grinding the back side of the stacking wafer, next bonding the front side of a reinforcing wafer through a bonding layer to the back side of the stacking wafer, next dividing the stacking wafer together with the reinforcing wafer into the plural second semiconductor devices, next bonding the front side of each second semiconductor device to the front side of the mother wafer to thereby connect the electrodes of each second semiconductor device to the electrodes of the corresponding first semiconductor device of the mother wafer, and finally grinding the reinforcing wafer bonded to the back side of each second semiconductor device to thereby remove the reinforcing wafer.

Claims3

Dependent claims

A manufacturing method for a stacked wafer configured by bonding a mother wafer having a plurality of first semiconductor devices on the front side thereof and a stacking wafer having a plurality of second semiconductor devices on the front side thereof, each of said first semiconductor devices having a plurality of first electrodes, each of said second semiconductor devices having a plurality of second electrodes, said manufacturing method comprising:

a protective member attaching step of attaching a protective member to the front side of said stacking wafer;
a stacking wafer grinding step of holding a unit of said stacking wafer and said protective member attached thereto on a chuck table of a grinding apparatus after performing said protective member attaching step and grinding the back side of said stacking wafer to reduce the thickness of said stacking wafer to a predetermined thickness;
a reinforcing wafer bonding step of bonding the front side of a reinforcing wafer through a bonding layer to the back side of said stacking wafer after performing said stacking wafer grinding step;
a stacking wafer dividing step of dividing said stacking wafer together with said reinforcing wafer into said plurality of second semiconductor devices after performing said reinforcing wafer bonding step;
a second semiconductor device bonding step of respectively bonding said plurality of second electrodes provided on the front side of each second semiconductor device to said plurality of first electrodes provided on said mother wafer after performing said stacking wafer dividing step;
and
a reinforcing wafer removing step of holding a unit of said mother wafer, said second semiconductor devices, and said reinforcing wafer bonded together on a chuck table of a grinding apparatus after performing said second semiconductor device bonding step and grinding said reinforcing wafer bonded to the back side of each second semiconductor device to thereby remove said reinforcing wafer from the back side of each second semiconductor device.

4 more elements

a protective member attaching step of attaching a protective member to the front side of said stacking wafer;
a stacking wafer grinding step of holding a unit of said stacking wafer and said protective member attached thereto on a chuck table of a grinding apparatus after performing said protective member attaching step and grinding the back side of said stacking wafer to reduce the thickness of said stacking wafer to a predetermined thickness;
a reinforcing wafer bonding step of bonding the front side of a reinforcing wafer through a bonding layer to the back side of said stacking wafer after performing said stacking wafer grinding step;
a second semiconductor device bonding step of stacking a unit of said stacking wafer and said reinforcing wafer bonded together on said mother wafer in the condition where the front side of said stacking wafer is opposed to the front side of said mother wafer after performing said reinforcing wafer bonding step, thereby respectively bonding said second electrodes provided on the front side of each second semiconductor device of said stacking wafer to said first electrodes provided on the front side of each first semiconductor device of said mother wafer;
and
a reinforcing wafer removing step of holding a unit of said mother wafer, said stacking wafer, and said reinforcing wafer bonded together on a chuck table of a grinding apparatus after performing said second semiconductor device bonding step and grinding said reinforcing wafer bonded to the back side of said stacking wafer to thereby remove said reinforcing wafer from the back side of said stacking wafer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/088,591Filed 18 Apr 2011
Priority: JP 2010-09684020 Apr 2010
Published: 20 Oct 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification20 codes

H10P 52/00
Grinding, lapping or polishing of wafers, substrates or parts of devices
B24B 1/00
Processes of grinding or polishing
B24B 7/228
For grinding inorganic material, e.g. stone, ceramics, porcelain: for grinding thin, brittle parts, e.g. semiconductors, wafers
H10P 54/00
Cutting or separating of wafers, substrates or parts of devices

Family

US 8,389,386 B2Related patent
US 2011/0256667 A1This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key