Method of manufacturing photoelectric conversion device

A method of manufacturing a photoelectric conversion device, the method comprising:

• a step of forming a first insulating film on a semiconductor substrate;
• a step of forming a gate electrode on the first insulating film with an electrically conductive material such that the first insulating film includes a first portion which is not covered by the gate electrode and a second portion which is covered by the gate electrode;
• a step of forming a charge accumulation region of a photoelectric converter by implanting impurity ions of a first conductivity type into the semiconductor substrate through the first portion of the first insulating film;
• a step of removing the first portion after the step of forming a charge accumulation region;
• a step of forming a second insulating film by oxidation such that the second insulating film covers the semiconductor substrate;
• and
• a step of forming a surface region of the photoelectric converter by implanting impurity ions of a second conductivity type opposite to the first conductivity type into the semiconductor substrate through the second insulating film.