US 2011/0256644 A1 · MASKS FOR MICROLITHOGRAPHY AND METHODS OF MAKING AND USING SUCH MASKS

Abstract

Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.

Claims20

Dependent claims

A method of processing a microlithography mask having a substrate transmissive to a radiation and a mask material on the substrate, the mask material having a plurality of openings arranged in an array corresponding to a desired pattern of features to be formed on a semiconductor wafer, the method comprising:

irradiating a photoimageable material on the semiconductor wafer through the substrate and the plurality of openings in the mask material, thereby forming a plurality of feature sites on the semiconductor wafer;
identifying a first feature site from the plurality of feature sites at which an intensity of radiation at a focal zone is less than that for a second feature site, the first and second feature sites generally corresponding to first and second openings in the mask material, respectively;
and
based on the identification, modifying at least one of the first and second openings in the mask material in accordance with a target phase shift between radiation passing through the first and second openings.

1 more element

A method of processing a photolithography mask, comprising:

exposing a semiconductor wafer to radiation through a mask to produce a pattern of features, the mask having an array of openings in a mask material carried by a substrate, the openings corresponding to the pattern of features formed on the semiconductor wafer and individually exposing a portion of the substrate;
from the plurality of openings, identifying a first opening that corresponds to a radiation intensity less than that of an adjacent second opening at a focal zone;
and
based on the identification, modifying the exposed portion of the substrate corresponding to at least one of the first and second openings in accordance with a target phase shift between radiation passing through the first and second openings.

1 more element

Dependencies are inferred from the claim text.

Masks for microlithography and methods of making and using such masks

Life of this patent

Masks for microlithography and methods of making and using such masks

Life of this patent

Abstract

Claims20