Photoresists and methods of use thereof
AssigneeRohm and Haas Electronic Materials LLC
InventorGerhard POHLERS
Life of this patent
Estimating the term…
Abstract
New photoresist are provided that comprises a low-Tg component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
Claims8
A method for providing an ion-implanted semiconductor substrate comprising:
- providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,
- wherein the photoresist comprises 1) a resin, 2) a photoactive component and 3) a resin having a Tg of at least about 5° C. less than the resin 1);
- and
- applying ions to the substrate.
A method for providing an ion-implanted semiconductor substrate comprising:
- providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,
- wherein the photoresist comprises 1) a resin, 2) a photoactive component and 3) a resin comprising pendant hydroxy(C2-20)alkyl and/or pendant C1-20alkoxy moieties;
- and
- applying ions to the substrate.
A coated substrate comprising:
- a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises 1) a resin, 2) a photoactive component and 3) a resin having a Tg of at least about 5° C. less than the resin 1);
- and
- the wafer having applied dopant ions, or
- A coated substrate comprising:
- a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises 1) a resin, 2) a photoactive component and 3) a resin comprising pendant hydroxy(C2-20)alkyl and/or pendant C1-20alkoxy moieties;
- and
- the wafer having applied dopant ions, or
- A method for forming a photoresist relief image comprising:
- (a) applying on a substrate a photoresist comprising 1) a resin, 2) a photoactive component and 3) a resin having a Tq of at least about 5° C. less than the resin 1);
- and
- (b) exposing the photoresist coating layer to patterned activating radiation, or
- A method for forming a photoresist relief image comprising:
- (a) applying on a substrate a photoresist comprising 1) a resin, 2) a photoactive component and 3) a resin comprising pendant hydroxy(C2-20)alkyl and/or pendant C1-20alkoxy moieties;
- and
- (b) exposing the photoresist coating layer to patterned activating radiation.
6-8. (canceled)
The method of claim 7 wherein 1) the radiation has a wavelength of 193 nm and/or 2) the photoresist composition is applied on an inorganic surface.
A photoresist composition comprising:
- 1) a resin, 2) a photoactive component and 3) i) a resin having a Tg of at least about 5° C. less than the resin 1) and/or ii) a resin comprising pendant hydroxy(C2-20)alkyl and/or pendant C1-20alkoxy moieties.
Dependencies are inferred from the claim text.