Nonvolatile semiconductor memory device, method of supplying voltage in the same, and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorDaichi Kaku
Life of this patent
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AssigneeKabushiki Kaisha Toshiba
InventorDaichi Kaku
Estimating the term…
A memory cell array is configured as an arrangement of memory cells. A first voltage generating circuit is configured to, during a write operation on the memory cells, generate and supply to the memory cell array a first voltage from a constant voltage, and to, during a read operation on the memory cells, generate and supply to the memory cell array a second voltage from a power supply voltage. A second voltage generating circuit is configured to generate the constant voltage. A selector circuit is configured to, during the write operation, drive the second voltage generating circuit to supply to the first voltage generating circuit the constant voltage, and to, during the read operation, stop the second voltage generating circuit and supply to the first voltage generating circuit the power supply voltage.
A nonvolatile semiconductor memory device, comprising:
A semiconductor device, comprising:
A method of supplying voltage in a nonvolatile semiconductor memory device,
Dependencies are inferred from the claim text.