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US 2011/0255022 A1Published application
Semiconductor device and method of fabricating the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Jun KOYAMA, Setsuo NAKAJIMA
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Abstract
A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.
Claims48
A display device comprising:
- a thin film transistor, the thin film transistor comprising:
- a gate electrode formed over a substrate;
- an insulating film formed over the gate electrode;
- a semiconductor film formed over the insulating film;
- a source electrode formed over the semiconductor film;
- and
- a drain electrode formed over the semiconductor film;
- a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode;
- a source wiring being continuous to the source electrode, formed over the insulating film;
- a gate wiring being continuous to the gate electrode, formed over the substrate;
- a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the semiconductor film between the source electrode and the drain electrode;
- and
- a capacitor, the capacitor comprising:
- a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode;
- the insulating film formed over the capacitor wiring;
- and
- the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween,
- wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion,
- wherein the capacitor wiring is electrically connected to a terminal portion, and
- wherein the terminal portion is formed in an edge portion of the substrate.
17 more elements
A display device comprising:
- a thin film transistor, the thin film transistor comprising:
- a gate electrode formed over a substrate;
- an insulating film formed over the gate electrode;
- a first semiconductor film formed over the insulating film;
- a source electrode formed over the first semiconductor film;
- and
- a drain electrode formed over the first semiconductor film;
- a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode;
- a source wiring being continuous to the source electrode, formed over the insulating film and a second semiconductor film;
- wherein the second semiconductor film is continuous to the first semiconductor film, and comprises the same material as the first semiconductor film,
- a gate wiring being continuous to the gate electrode, formed over the substrate;
- a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the first semiconductor film between the source electrode and the drain electrode;
- and
- a capacitor, the capacitor comprising;
- a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode;
- the insulating film formed over the capacitor wiring;
- and
- the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween,
- wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion,
- wherein the capacitor wiring is electrically connected to a terminal portion, and
- wherein the terminal portion is formed in an edge portion of the substrate.
18 more elements
A display device comprising:
- a thin film transistor, the thin film transistor comprising:
- a gate electrode formed over a substrate;
- an insulating film formed over the gate electrode;
- a semiconductor film formed over the insulating film;
- a source electrode formed over the semiconductor film;
- and
- a drain electrode formed over the semiconductor film;
- a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode;
- a source wiring being continuous to the source electrode, formed over the insulating film;
- a gate wiring being continuous to the gate electrode, formed over the substrate;
- a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the semiconductor film between the source electrode and the drain electrode;
- an alignment film formed over the passivation film;
- and
- a capacitor, the capacitor comprising:
- a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode;
- the insulating film formed over the capacitor wiring;
- and
- the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween,
- wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion,
- wherein the capacitor wiring is electrically connected to a terminal portion, and
- wherein the terminal portion is formed in an edge portion of the substrate.
18 more elements
A display device comprising:
- a thin film transistor, the thin film transistor comprising:
- a gate electrode formed over a substrate;
- an insulating film formed over the gate electrode;
- a first semiconductor film formed over the insulating film;
- a source electrode formed over the first semiconductor film;
- and
- a drain electrode formed over the first semiconductor film;
- a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode;
- a source wiring being continuous to the source electrode, formed over the insulating film and a second semiconductor film;
- wherein the second semiconductor film is continuous to the first semiconductor film, and comprises the same material as the first semiconductor film,
- a gate wiring being continuous to the gate electrode, formed over the substrate;
- a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the first semiconductor film between the source electrode and the drain electrode;
- an alignment film formed over the passivation film;
- and
- a capacitor, the capacitor comprising;
- a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode;
- the insulating film formed over the capacitor wiring;
- and
- the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween,
- wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion,
- wherein the capacitor wiring is electrically connected to a terminal portion, and
- wherein the terminal portion is formed in an edge portion of the substrate.
19 more elements
Dependencies are inferred from the claim text.