TSVs with Different Sizes in Interposers for Bonding Dies
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hao Tsai, Jing-Cheng Lin, Chen-Hua Yu
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Abstract
A device includes an interposer including a substrate having a top surface and a bottom surface. A plurality of through-substrate vias (TSVs) penetrates through the substrate. The plurality of TSVs includes a first TSV having a first length and a first horizontal dimension, and a second TSV having a second length different from the first length, and a second horizontal dimension different from the first horizontal dimension. An interconnect structure is formed overlying the top surface of the substrate and electrically coupled to the plurality of TSVs.
Claims20
A device comprising:
- an interposer comprising a substrate having a top surface and a bottom surface;
- a plurality of through-substrate vias (TSVs) penetrating through the substrate, wherein the plurality of TSVs comprises a first TSV having a first length and a first horizontal dimension, and a second TSV having a second length different from the first length, and a second horizontal dimension different from the first horizontal dimension;
- and
- a first interconnect structure formed overlying the top surface of the substrate and electrically coupled to the plurality of TSVs.
A device comprising:
- a silicon substrate substantially free from integrated circuit devices;
- a first through-substrate via (TSV) with a first length extending from a top surface of the silicon substrate to a first bottom surface of the silicon substrate;
- a second TSV with a second length extending from the top surface of the silicon substrate to a second bottom surface of the silicon substrate, wherein the first length is greater than the second length;
- a first die overlying the top surface of the silicon substrate;
- and
- a second die underlying the second bottom surface of the silicon substrate and electrically coupled to the second TSV.
A device comprising:
- a silicon substrate substantially free from integrated circuit devices;
- a molding compound underlying the silicon substrate;
- a first through-substrate via (TSV) extending from a top surface of the silicon substrate to a bottom surface of the molding compound;
- a second TSV extending from the top surface of the substrate to a bottom surface of the silicon substrate;
- a first die overlying the top surface of the silicon substrate;
- and
- a second die in the molding compound and electrically coupled to the second TSV.
Dependencies are inferred from the claim text.