Vertical interdigitated semiconductor capacitor

A semiconductor device, comprising:

• a substrate that spans in an X-direction and a Y-direction that is orthogonal to the X-direction;
• and
• an interconnect structure formed over the substrate in a Z-direction that is orthogonal to both the X-direction and the Y-direction, the interconnect structure including a plurality of metal lines interconnected together in the Z-direction by a plurality of vias, the interconnect structure containing a capacitor that includes an anode component and a cathode component;
• wherein:
• the anode component includes an array of elongate anode stack elements extending in the Z-direction;
• the cathode component includes an array of elongate cathode stack elements extending in the Z-direction;
• and
• the array of anode stack elements are interdigitated with the array of cathode stack elements in both the X direction and the Y direction.

A method of fabricating a semiconductor device, comprising:

• providing a substrate having a surface that is defined by a first axis and a second axis that is perpendicular to the first axis;
• and
• forming an interconnect structure over the surface of the substrate, the interconnect structure having a plurality of conductive lines interconnected by a plurality of vias, wherein the forming the interconnect structure includes forming a capacitor with at least some of the conductive lines and at least some of the vias, the capacitor having an anode component that includes a plurality of first conductive elements and a cathode component that includes a plurality of second conductive elements;
• wherein:
• the first conductive elements and the second conductive elements each extend along a third axis that is perpendicular to the surface of the substrate;
• and
• wherein the first conductive elements are formed to be interdigitated with the second conductive elements along both the first axis and the second axis.