Programmable anti-fuse structures with conductive material islands

A structure comprising:

• at least one interconnect region and at least one laterally adjacent anti-fuse region located at a same interconnect level, wherein said at least one laterally adjacent anti-fuse region includes an anti-fuse structure, said anti-fuse structure comprising a dielectric material having at least two adjacent conductive features embedded therein, at least one conductive material island located on an upper surface of said dielectric material and between the at least two adjacent conductive features, and a dielectric capping layer located on exposed surfaces of said dielectric material, said at least one conductive material island and said at least two adjacent conductive features, wherein when the anti-fuse structure is in a programmed state, a dielectric breakdown path is present in said dielectric material that is located beneath said at least one conductive material island which conducts electrical current to electrically couple the two adjacent conductive features.

A method of programming an anti-fuse structure comprising:

• providing an anti-fuse structure including a dielectric material having at least two adjacent conductive features embedded therein, at least one conductive material island located on an upper surface of said dielectric material between the at least two adjacent conductive features, and a dielectric capping layer located on exposed surfaces of said dielectric material, said at least one conductive material island and said at least two adjacent conductive features;
• and
• applying a voltage to said anti-fuse structure, wherein said voltage causes a dielectric breakdown path to form in said dielectric material that is located beneath said at least one conductive material island which conducts electrical current to electrically couple the two adjacent conductive features.