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US 2011/0254083 A1Published application
Semiconductor device and method for forming the same
AssigneeHynix Semiconductor Inc.
InventorHae Il SONG
Life of this patent
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Abstract
A semiconductor device including a buried gate and a method for forming the same are disclosed. The semiconductor device includes a buffer layer formed on a surface of a trench in a semiconductor substrate, and a gate electrode configured to partially bury the trench and formed of the same material as in the buffer layer.
Claims21
A semiconductor device comprising:
- a buffer layer over a surface of a trench in a semiconductor substrate;
- and
- a gate electrode partially buried in the trench, and comprising same material as the buffer layer.
A method for forming a semiconductor device comprising:
- forming a buffer layer on a surface of a trench in a semiconductor substrate;
- and
- forming a gate electrode which is partially buried in the trench and comprises the same material as the buffer layer.
Dependencies are inferred from the claim text.