Semiconductor device
AssigneeElpida Memory, Inc.
InventorYuki MIURA
Life of this patent
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Abstract
A semiconductor device includes, a semiconductor substrate, a first transistor of a first conductivity type, a second transistor of a second conductivity type, a first capacitor, and a first wiring. The semiconductor substrate includes first, second, and third regions. The third region is sandwiched between the first and second regions. The first transistor of the first conductivity type is disposed in the first region. The second transistor of the second conductivity type is disposed in the second region. The first capacitor is disposed in the third region. The first wiring electrically couples one of main electrodes of the first transistor and one of main electrodes of the second transistor. The first wiring passes above the first capacitor.
Claims20
A semiconductor device comprising:
- a semiconductor substrate including first, second, and third regions, the third region being sandwiched between the first and second regions;
- a first transistor of a first conductivity type disposed in the first region;
- a second transistor of a second conductivity type disposed in the second region;
- a first capacitor disposed in the third region;
- and
- a first wiring electrically coupling one of main electrodes of the first transistor and one of main electrodes of the second transistor, the first wiring passing above the first capacitor.
A semiconductor device comprising:
- a first line having a substantially fixed potential, the first line being elongated in a first direction;
- a semiconductor substrate including a first region of a first conductivity type;
- a first transistor including first source and first drain regions of a second conductivity type and a first gate electrode with an intervention of a first gate insulating film, the first source and first drain regions being disposed in the first region, the first gate electrode being disposed in a first portion of the first region, the first gate electrode being disposed between the first source and first drain regions;
- and
- a first capacitor including a first electrode region of the second conductivity type and a second electrode disposed in a second portion of the first region on the first electrode region with an intervention of a capacitor insulating film, the first capacitor being arranged so that the first transistor is sandwiched between the first line and the first capacitor.
A device comprising:
- a plurality of circuit cells arranged in a first direction, each of the circuit cells including a first region of a first conductivity type and a second region of a second conductivity type, the first and second regions being arranged in a second direction different from the first direction in the each of the circuit cells;
- first and second power supply lines elongated in the first direction in substantially parallel to each other;
- a plurality of first transistors each disposed in the first region of a first associated one of the circuit cells and coupled to the first power supply line;
- a plurality of second transistors each disposed in the second region of a second associated one of the circuit cells and coupled to the second power supply line;
- and
- a first capacitor disposed in the first region of at least a circuit cell of the circuit cells to be sandwiched between the first and the second transistors of the at least one of the circuit cells.
Dependencies are inferred from the claim text.