Semiconductor light emitting device and method of fabricating the same
AssigneeLG Innotek Co., Ltd.
InventorSang-Youl LEE
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Abstract
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
Claims13
A light emitting device comprising:
- a first conductive semiconductor layer;
- an active layer formed on the first conductive semiconductor layer;
- a second conductive semiconductor layer formed on the active layer;
- an outer protection semiconductor layer formed at an outer circumference portion of the second conductive semiconductor layer, wherein the outer protection semiconductor layer is one of III-V group compound semiconductors;
- a reflective electrode layer formed on the second conductive semiconductor layer and the outer protection semiconductor layer;
- and
- a conductive support substrate formed on the reflective electrode layer.
A method of manufacturing a light emitting device, the method comprising:
- forming a first conductive semiconductor layer on a substrate;
- forming an active layer on the first conductive semiconductor layer;
- forming a second conductive semiconductor layer on the active layer;
- forming an outer protection semiconductor layer on an outer circumference portion of the second conductive semiconductor layer, wherein the outer protection semiconductor layer is one of III-V group compound semiconductors;
- and
- forming a reflective electrode layer on the second conductive semiconductor layer and the outer protection semiconductor layer.
Dependencies are inferred from the claim text.