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US 2011/0254015 A1Published application
METHOD FOR IMPROVING DEVICE PERFORMANCE USING EPITAXIALLY GROWN SILICON CARBON (SiC) OR SILICON-GERMANIUM (SiGe)
AssigneeInternational Business Machines Corporation
InventorsBruce B. Doris, Johnathan E. Faltermeier, Lahir M. Shaik Adam, Balasubramanian S. Pranatharthi Haran
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Abstract
A semiconductor substrate including a field effect transistor (FET) and a method of producing the same wherein a stressor is provided in a recess before the source/drain region is formed. The device has an increased carrier mobility in the channel region adjacent to the gate electrode.
Claims23
A semiconductor structure comprising:
- a transistor gate electrode;
- an epitaxially grown extension region abutting the transistor gate electrode;
- a source region abutting the epitaxially grown extension region at a first region;
- and
- a drain region abutting the epitaxially grown extension region at a second region.
2 more elements
A method of fabricating a semiconductor structure comprising:
- providing a semiconductor substrate;
- forming a gate electrode on the semiconductor substrate;
- forming an offset spacer abutting the gate electrode;
- forming a recess in the semiconductor substrate adjacent to the offset spacer;
- epitaxially growing an extension region in the recess;
- forming a source/drain spacer abutting the offset spacer and the extension region;
- and
- forming a source region or a drain region abutting the extension region.
5 more elements
Dependencies are inferred from the claim text.