Nitride semiconductor wafer and nitride semiconductor device
AssigneeHitachi Cable, Ltd.
InventorTadayoshi TSUCHIYA
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Abstract
There is stably provided a nitride semiconductor wafer having a nitride semiconductor layer with high insulating properties, wherein a semi-insulating nitride semiconductor layer is provided on an insulating substrate, with a resistivity of 10 MΩcm or more and 100 MΩcm or less, and a film thickness of 0.1 μm or more and 1.5 μm or less.
Claims12
A nitride semiconductor wafer, having a semi-insulating nitride semiconductor layer on an insulating substrate, with a resistivity of 10 MΩcm or more and 100 MΩcm or less, a film thickness of 0.1 μm or more and 1.5 μm or less.
A nitride semiconductor wafer having a semi-insulating nitride semiconductor layer on an electroconductive substrate, with a resistivity of 10 MΩcm or more and 100 MΩcm or less, and a film thickness of 0.5 μm or more and 1.5 μm or less.
Dependencies are inferred from the claim text.