Light emitting diode and fabrication method thereof

An LED comprising:

• a first conductive type semiconductor layer;
• at least one GaN layer having indium directly on the first conductive type semiconductor layer;
• at least one GaN layer formed directly on the at least one GaN layer having indium;
• an active layer directly on the at least one GaN layer;
• and
• a second conductive type semiconductor layer on the active layer,
• wherein the active layer includes at least one well layer and at least one barrier layer formed in 1 period to 7 periods.

An LED comprising:

• a first conductive type semiconductor layer, wherein the first conductive type semiconductor layer is doped with Si (Silicon);
• at least one GaN layer having indium directly on the first conductive type semiconductor layer;
• at least one GaN layer formed directly on the at least one GaN layer having indium;
• an active layer directly on the at least one GaN layer;
• and
• a second conductive type semiconductor layer on the active layer, wherein the second conductive type semiconductor layer is doped with Mg (Magnesium), wherein the second conductive type semiconductor layer has a thickness of 750-1500 Å.

An LED comprising:

• a first conductive type semiconductor layer, wherein a thickness of the first conductive type semiconductor layer is 1-3 μm;
• at least one GaN layer having indium directly on the first conductive type semiconductor layer;
• at least one GaN layer formed directly on the at least one GaN layer having indium;
• an active layer directly on the at least one GaN layer;
• and
• a second conductive type semiconductor layer on the active layer.