Transparent nanowire transistors and methods for fabricating same
OwnerTobin J. Marks, David B. Janes +4inventors
InventorsTobin J. Marks, David B. Janes, Sanghyun Ju, Peide Ye, Chongwu Zhou, Antonio Facchetti
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Abstract
Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
Claims27
A nanowire transistor device comprising:
- one or more semiconducting nanowires extending between a source electrode and a drain electrode, and
- a gate dielectric in contact with the one or more nanowires,
- wherein each of the gate dielectric, the source electrode and the drain electrode is transparent.
A method of fabricating a nanowire transistor device, the method comprising:
- applying a gate electrode layer on a substrate;
- applying a dielectric layer on the gate electrode layer;
- applying one or more semiconducting nanowires on the dielectric layer;
- and
- applying a source electrode and a drain electrode on the dielectric layer;
- wherein the application of the gate electrode layer, the application of the dielectric layer, the application of the one or more semiconducting nanowires, and the application of the source electrode and the drain electrode are conducted at a temperature less than about 100° C., and
- wherein each of the gate electrode layer, the dielectric layer, the source electrode, the drain electrode, and the substrate is transparent, and the one or more semiconducting nanowires extend between the source electrode and the drain electrode.
Dependencies are inferred from the claim text.