Vertical transistor phase change memory
AssigneeMicron Technology, Inc.
InventorJun Liu
Life of this patent
Estimating the term…
Abstract
Vertical transistor phase change memory and methods of processing phase change memory are described herein. One or more methods include forming a dielectric on at least a portion of a vertical transistor, forming an electrode on the dielectric, and forming a vertical strip of phase change material on a portion of a side of the electrode and on a portion of a side of the dielectric extending along the electrode and the dielectric into contact with the vertical transistor.
Claims30
A method of processing a phase change memory cell, comprising:
- forming a dielectric on at least a portion of a vertical transistor;
- forming an electrode on the dielectric;
- and
- forming a vertical strip of phase change material on a portion of a side of the electrode and on a portion of a side of the dielectric extending along the electrode and the dielectric into contact with the vertical transistor.
A method of processing phase change memory cells, comprising:
- forming a dielectric on an array of vertical transistors;
- forming an electrode on the dielectric;
- and
- forming a phase change material on, and in contact with, the dielectric and the electrode by a common plane, wherein the phase change material is on, and in contact with, a number of vertical transistors of the array of vertical transistors.
A method of processing phase change memory cells, comprising:
- forming a spacer on an exposed pillar of a vertical transistor;
- forming a vertical line electrode between the spacer on the exposed pillar of the vertical transistor;
- forming a dielectric on at least a portion of the vertical line electrode;
- forming a top electrode on the dielectric;
- and
- forming a phase change material on and in contact with the vertical line electrode, the dielectric, and the top electrode.
A phase change memory cell, comprising:
- a vertical transistor including a bottom electrode on a pillar;
- a dielectric on a top surface of a portion of the bottom electrode;
- a top electrode on the dielectric;
- a phase change material on a side surface of the top electrode, on a side surface of the dielectric, and on a top surface of the bottom electrode.
A phase change memory cell, comprising:
- a vertical transistor including a vertical line electrode;
- a dielectric on a top surface of a portion of the vertical line electrode;
- a top electrode on a top surface of the dielectric;
- and
- a phase change material on a side surface of the top electrode, on a side surface of the dielectric, and on a top surface of the vertical line electrode.
Dependencies are inferred from the claim text.