Process for producing single-crystal sapphire
AssigneeShowa Denko K.K.
InventorTomohiro Shonai
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AssigneeShowa Denko K.K.
InventorTomohiro Shonai
Estimating the term…
Following steps are implemented: a melting step in which aluminum oxide within a crucible is melted to obtain an aluminum melt; a shoulder-portion formation step in which a seed crystal brought into contact with the aluminum melt is pulled up to thereby form a shoulder portion below the seed crystal; a body-portion formation step in which single-crystal sapphire is pulled up from the melt to form a body portion; and a tail-portion formation step in which a mixed gas including oxygen and an inert gas and having an oxygen concentration set at not less than 1.0 vol % nor more than 5.0 vol % is supplied while the single-crystal sapphire is pulled away from the melt to form a tail portion. Thus, when single-crystal sapphire is obtained by growth from a melt of aluminum oxide, formation of a protrusion in the tail portion of the single-crystal sapphire is more effectively inhibited.
A process for producing single-crystal sapphire, comprising the steps of:
A process for producing single-crystal sapphire, comprising the steps of:
A process for producing single-crystal sapphire including pulling up single-crystal sapphire from a melt of aluminum oxide within a crucible, the process comprising the steps of:
Dependencies are inferred from the claim text.