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US 2011/0237072 A1Published application
Integrated circuit system with through silicon via and method of manufacture thereof
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsPradeep Ramachandramurthy Yelehanka, Denise Tan, Chung Meng Lek, Thomas Thiam, Jeffrey C. Lam, Liang-Choo Hsia
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Abstract
A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
Claims27
A method of forming a device comprising:
- providing a substrate including an active device;
- forming a through-silicon-via (TSV) contact into the substrate;
- forming a masking layer over the through-silicon-via to protect the through-silicon-via;
- and
- forming a device contact to the active device after forming the masking layer.
2 more elements
A method of forming a device comprising:
- providing a substrate including an active device;
- forming a device contact to the active device;
- forming a masking layer over the contact to protect the contact;
- forming a TSV contact into the substrate after forming the masking layer;
- and
- removing the masking layer.
3 more elements
A method of forming a device comprising:
- providing a substrate, the substrate is prepared with an active device;
- a passivation layer over the device;
- forming a first contact in at least the passivation layer;
- forming a device layer over the passivation layer, the device layer protecting the first contact;
- and
- forming a second contact in at least the passivation layer.
3 more elements
Dependencies are inferred from the claim text.