Semiconductor Devices Including Doped Metal Silicide Patterns and Related Methods of Forming Such Devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Ho Yun, Gil-heyun Choi, Jong-Myeong Lee
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Abstract
Provided are a semiconductor device and a method of forming the same. The method includes forming an interlayer dielectric on a semiconductor substrate, forming a contact hole in the interlayer dielectric to expose the semiconductor substrate, forming a metal pattern including a dopant on the exposed semiconductor substrate, and performing a heat treatment process to react the semiconductor substrate with the metal pattern to form a metal silicide pattern. The heat treatment process includes diffuses the dopant into the semiconductor substrate.
Claims17
A method of forming a semiconductor device, the method comprising:
- forming an interlayer dielectric on a semiconductor substrate;
- forming a contact hole in the interlayer dielectric that exposes a portion of the semiconductor substrate;
- forming a metal pattern that includes a dopant in the contact hole on the exposed portion of the semiconductor substrate;
- and
- performing a heat treatment process to react the semiconductor substrate with the metal pattern to form a metal silicide pattern and to diffuse some of the dopant into the semiconductor substrate.
A method of forming a semiconductor device, the method comprising:
- forming an interlayer dielectric on a silicon substrate;
- forming a contact hole in the interlayer dielectric that exposes the silicon substrate;
- selectively forming a metal pattern that includes a dopant in the contact hole;
- and
- converting at least part of the metal pattern that includes the dopant into a metal silicide pattern;
- and
- diffusing some of the dopant from the metal pattern into the silicon substrate.
Dependencies are inferred from the claim text.