Systems and methods for co-doping wide band gap materials

A method of simultaneously co-doping aluminum nitrite with a single salt dopant having both p-type and n-type impurities to create a p-n junction within the resulting aluminum nitrite composite material, said method comprising:

• disposing a single salt dopant comprising both p-type and n-type impurities between a pair of aluminum nitrite films to provide an aluminum nitrite and dopant sample;
• disposing the aluminum nitrite and dopant sample between a pair of opposing electrodes of a diffusion device;
• disposing the aluminum nitrite and dopant sample and the electrodes within a vacuum chamber of the diffusion device and subjecting the aluminum nitrite and dopant sample to a preselected vacuum;
• heating the aluminum nitrite and dopant sample to a preselected temperature, via a heating element of the diffusion device, while the aluminum nitrite and dopant sample is being subjected to the preselected vacuum;
• applying a preselected voltage across the aluminum nitrite and dopant sample, via the opposing electrodes, while the aluminum nitrite and dopant sample is being subjected to the preselected vacuum and is maintained at the preselected temperature;
• and
• subjecting the aluminum nitrite and dopant sample to at least one laser beam having a preselected intensity and a preselected wavelength, via at least one laser source of the diffusion device, while the aluminum nitrite and dopant sample is being subjected to the preselected vacuum and is being maintained at the preselected temperature and has the preselected voltage applied there across such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the aluminum nitrite films resulting in aluminum nitrite compound films comprising a p-n junction.

A method of simultaneously co-doping aluminum nitrite with a magnesium silicide to create an aluminum nitrite compound that has a p-n junction therein and exhibits current-voltage characteristics indicative of a light emitting diode, said method comprising

• disposing a magnesium silicide dopant between a pair of aluminum nitrite films to provide an aluminum nitrite and magnesium silicide sample;
• disposing the aluminum nitrite and magnesium silicide sample between a pair of opposing electrodes of a diffusion device, wherein the electrodes are fabricated of one of aluminum nitrite and boron nitrite;
• disposing the aluminum nitrite and magnesium silicide sample and the electrodes within a vacuum chamber of the diffusion device and subjecting the aluminum nitrite and magnesium silicide sample to a preselected vacuum;
• heating the aluminum nitrite and magnesium silicide sample to a preselected temperature, via a heating element disposed within one of the electrodes, while the aluminum nitrite and magnesium silicide sample is being subjected to the preselected vacuum;
• applying a preselected voltage across the aluminum nitrite and magnesium silicide sample, via the opposing electrodes, while the aluminum nitrite and magnesium silicide sample is being subjected to the preselected vacuum and is maintained at the preselected temperature;
• and
• subjecting the aluminum nitrite and magnesium silicide sample to at least one laser beam having a preselected intensity and a preselected wavelength, via at least one laser source of the diffusion device, while the aluminum nitrite and magnesium silicide sample is being subjected to the preselected vacuum and is being maintained at the preselected temperature and has the preselected voltage applied there across such that p-type and n-type impurities of the magnesium silicide substantially simultaneously diffuse into the aluminum nitrite films resulting in aluminum nitrite compound films comprising a p-n junction and exhibiting current-voltage characteristics indicative of a light emitting diode.