Method of manufacturing a finned semiconductor device structure
AssigneeGlobalfoundries Inc.
InventorsWitold MASZARA, Robert J. MILLER
Life of this patent
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Abstract
A method of manufacturing a finned semiconductor device structure is provided. The method begins by providing a substrate having bulk semiconductor material. The method continues by forming a semiconductor fin structure from the bulk semiconductor material, depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, and planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface. Thereafter, a replacement gate procedure is performed to form a gate structure transversely overlying the semiconductor fin structure.
Claims20
A method of manufacturing a finned semiconductor device structure, the method comprising:
- forming a semiconductor fin structure from a layer of semiconductor material;
- depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, resulting in deposited insulating material;
- creating a flat surface from the deposited insulating material, the flat surface being continuous with an upper surface of the semiconductor fin structure;
- fabricating a dummy gate structure overlying the flat surface, the dummy gate structure transversely overlying the semiconductor fin structure;
- forming spacers adjacent sidewalls of the dummy gate structure;
- thereafter, removing the dummy gate structure while leaving the spacers substantially intact, to expose the flat surface between the spacers;
- and
- thereafter, selectively etching some of the deposited insulating material below an area defined between the spacers, and in a manner that is self-aligned with the spacers.
A method of manufacturing a finned semiconductor device structure, the method comprising:
- providing a substrate having bulk semiconductor material;
- forming a semiconductor fin structure from the bulk semiconductor material;
- depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, resulting in deposited insulating material;
- planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface;
- and
- thereafter, performing a replacement gate procedure to form a gate structure transversely overlying the semiconductor fin structure.
A method of manufacturing a finned semiconductor device structure, the method comprising:
- providing a substrate having bulk semiconductor material;
- forming a plurality of semiconductor fin structures from the bulk semiconductor material;
- creating isolation trenches in the bulk semiconductor material, the isolation trenches located between the plurality of semiconductor fin structures;
- filling the isolation trenches and covering the plurality of semiconductor fin structures with an insulating material, resulting in deposited insulating material;
- creating a flat surface from the deposited insulating material, the flat surface being continuous with upper surfaces of the plurality of semiconductor fin structures;
- and
- thereafter, performing a replacement gate procedure to form a gate structure transversely overlying the plurality of semiconductor fin structures.
Dependencies are inferred from the claim text.