Alternating-doping profile for source/drain of a fet
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Liang Chu, Chun-Ting Liao, Fei-Yuh Chen, Tsung-Yi Huang
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Abstract
A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the semiconductor substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.
Claims20
A method of forming a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a gate structure on the semiconductor substrate;
- forming one of a source and a drain adjacent the gate structure, wherein the forming the one of a source and a drain comprises:
- doping the semiconductor substrate to form an area of a first concentration of a first dopant type thereby forming a first doped region;
- and
- thereafter, doping a portion of the first doped region to provide a second doped region and a third doped region having a second concentration of the first dopant type different than the first concentration, wherein the third doped region is spaced a distance from the second doped region.
A method, comprising:
- forming a transistor device on a semiconductor substrate, wherein the forming the transistor device comprises:
- forming a gate structure;
- forming a source region adjacent the gate structure;
- and
- forming a drain region adjacent the gate structure, wherein forming the drain region comprises forming an alternating-doping profile region including a first region and a second region having a dopant with a first concentration and a third region having the dopant with a second concentration and interposing the first and second region, wherein the second concentration is lower than the first concentration;
- and
- forming a channel region underlying the gate structure, wherein each of the first, second and third regions directly interface the channel region.
A method of forming a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a high voltage well disposed in the semiconductor substrate, wherein the high voltage well has a dopant of a first type;
- forming a first source/drain region disposed in the high voltage well, wherein the first source/drain region has a dopant of a second type;
- forming a second source/drain region disposed in the high voltage well, wherein the second source/drain region is spaced a distance from the first source/drain region, and wherein the forming the second source/drain region comprises:
- performing a first doping process of a substantially rectangular region of the second source/drain region using a dopant of the second type;
- thereafter, performing a second doping process of a first portion and a second portion of the substantially rectangular region, the first and second portion spaced a distance from each other;
- and
- forming a channel region disposed between and associated with the first region and the second region.
Dependencies are inferred from the claim text.