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US 2011/0237035 A1Published application
Formation of Active Area Using Semiconductor Growth Process without STI Integration
AssigneeInfineon Technologies AG
InventorsJiang Yan, Danny Pak-Chum Shum
Life of this patent
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Abstract
A semiconductor device can be formed without use of an STI process. An insulating layer is formed over a semiconductor body. Portions of the insulating layer are removed to expose the semiconductor body, e.g., to expose bare silicon. A semiconductor material, e.g., silicon, is grown over the exposed semiconductor body. A device, such as a transistor, can then be formed in the grown semiconductor material.
Claims20
A method of making a semiconductor device, the method comprising:
- providing a semiconductor substrate having a top surface;
- forming a plurality of isolation regions above the substrate;
- forming a plurality of active areas of semiconductor material above the semiconductor substrate and adjacent the isolation regions so that each active area is isolated from another active area by an isolation region, each active area having an interface at the substrate where semiconductor material of the active area touches semiconductor material of the substrate, wherein said active areas have an interface at the top surface of the substrate where said semiconductor material of the active areas touches semiconductor material of the substrate;
- and
- forming a plurality of transistors, each transistor at least two doped regions disposed within the semiconductor material of an active area and an electrode disposed over the semiconductor material of that active area.
2 more elements
A method of making a semiconductor device, the method comprising:
- providing a semiconductor substrate having a top surface;
- forming a plurality of isolation regions above the substrate;
- forming a plurality of active areas of semiconductor material above the semiconductor substrate and adjacent the isolation regions so that each active area is isolated from another active area by an isolation region, each active area having an interface at the substrate where semiconductor material of the active area touches semiconductor material of the substrate, said active areas having a top surface at the same level as said top surface of said isolation structures, wherein an interface between the surface of the substrate and the active area is undetectable in cross-sectional view;
- and
- forming a plurality of transistors within said active areas, each transistor comprising at least two doped regions disposed within the semiconductor material of an active area and an electrode disposed over the semiconductor material of that active area.
2 more elements
A method of making a semiconductor device, the method comprising:
- providing a semiconductor substrate having a top surface;
- forming a first and a second isolation structure, the first and the second isolation structure forming a gap between the first and the second isolation structures;
- growing semiconductor material from said top surface of said semiconductor substrate in the gap between the first and the second isolation structures;
- and
- forming a transistor having a first doped region and a second doped region disposed in the grown semiconductor material.
2 more elements
Dependencies are inferred from the claim text.