Method of fabricating solar cell using microwave and apparatus for the same
AssigneeJusung Engineering Co., Ltd.
InventorGun-Mook Lim
Life of this patent
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Abstract
A method of fabricating a solar cell includes: forming a first electrode on a substrate; forming a first impurity-doped semiconductor layer on the first electrode; forming a first intrinsic semiconductor layer of amorphous silicon on the first impurity-doped semiconductor layer; forming a second impurity-doped semiconductor layer over the first impurity-doped semiconductor layer, forming a second electrode over the second impurity-doped semiconductor layer; and irradiating a first microwave to form a second intrinsic semiconductor layer of microcrystalline silicon by crystallizing the first intrinsic semiconductor layer.
Claims22
A method of fabricating a solar cell, comprising:
- forming a first electrode on a substrate;
- forming a first impurity-doped semiconductor layer on the first electrode;
- forming a first intrinsic semiconductor layer of amorphous silicon on the first impurity-doped semiconductor layer;
- forming a second impurity-doped semiconductor layer over the first impurity-doped semiconductor layer;
- forming a second electrode over the second impurity-doped semiconductor layer;
- and
- irradiating a first microwave to form a second intrinsic semiconductor layer of microcrystalline silicon by crystallizing the first intrinsic semiconductor layer.
(canceled)
A method of fabricating a solar cell, comprising:
- forming a first electrode on a substrate;
- forming a first impurity-doped semiconductor layer on the first electrode;
- forming a first intrinsic semiconductor layer of microcrystalline silicon having a first crystallinity on the first impurity-doped semiconductor layer;
- forming a second impurity-doped semiconductor layer over the first impurity-doped semiconductor layer;
- forming a second electrode over the second impurity-doped semiconductor layer;
- and
- irradiating a first microwave to form a second intrinsic semiconductor layer of microcrystalline silicon having a second crystallinity greater than the first crystallinity by crystallizing the first intrinsic semiconductor layer.
A method of fabricating a solar cell, comprising:
- forming a first electrode on a substrate;
- forming a first impurity-doped semiconductor layer on the first electrode;
- forming a first intrinsic semiconductor layer of amorphous silicon on the first impurity-doped semiconductor layer;
- irradiating a first microwave to form a second intrinsic semiconductor layer of microcrystalline silicon having a first crystallinity by crystallizing the first intrinsic semiconductor layer;
- forming a third intrinsic semiconductor layer of amorphous silicon on the second intrinsic semiconductor layer;
- irradiating a second microwave to form a fourth intrinsic semiconductor layer of microcrystalline silicon having a second crystallinity greater than the first crystallinity by crystallizing the third intrinsic semiconductor layer;
- forming a second impurity-doped semiconductor layer on the fourth intrinsic semiconductor layer;
- and
- forming a second electrode on the second impurity-doped semiconductor layer.
An apparatus for fabricating a solar, comprising:
- a chamber having a reaction space;
- a supporting unit in the chamber, wherein a substrate is loaded on the supporting unit;
- a microwave generating unit moving over the supporting unit;
- and
- a driving unit moving the microwave generating unit.
(canceled)
Dependencies are inferred from the claim text.