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US 2011/0236837 A1Published application
Switchable Antireflective Coatings
AssigneeDow Corning Corporation
InventorsPeng-Fei Fu, Eric Moyer, Jason Suhr
Life of this patent
Estimating the term…
Abstract
An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group.
Claims17
An antireflective coating compositions comprising
- (I) a silsesquioxane resin comprising the units
- (Ph(CH2)rSiO(3-x)/2(OR′)x)m
- (HSiO(3-x)/2(OR′)x)n
- (MeSiO(3-x)/2(OR′)x)o
- (RSiO(3-x)/2(OR′)x)p
- (R1SiO(3-x)/2(OR′)x)q
- (II) a compound selected from photo-acid generators and thermal acid generators;
- and
- (III) a solvent
- wherein in the silsesquioxane resin Ph is a phenyl group, Me is a methyl group;
- R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms;
- each R is a carboxylic acid forming group or a sulfuric acid forming group with optionally trace amounts of the corresponding carboxylic acid or sulfuric acid;
- and each R1 is independently selected from substituted phenyl groups, ester groups, polyether groups;
- mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups;
- and r has a value of 0, 1, 2, 3, or 4;
- x has a value of 0, 1 or 2;
- m has a value of 0 to 0.95;
- n has a value of 0.05 to 0.95;
- o has a value of 0 to 0.95;
- p has a value of 0.05 to 0.5;
- q has a value of 0 to 0.95;
- and m+n+o+p+q≈1.
19 more elements
(canceled)
(canceled)
A method for forming an antireflective coating on an electronic device comprising
- (A) applying to an electronic device an anti-reflective coating composition comprising
- (I) a silsesquioxane resin is comprises the units
- (Ph(CH2)rSiO(3-x)/2(OR′)x)m
- (HSiO(3-x)/2(OR′)x)n
- (MeSiO(3-x)/2(OR′)x)o
- (RSiO(3-x)/2(OR′)x)p
- (R1SiO(3-x)/2(OR′)x)q
- (II) a compound selected from photo-acid generators and thermal acid generators;
- and
- (III) a solvent,
- (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.
- wherein in the silsesquioxane resin Ph is a phenyl group, Me is a methyl group;
- R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms;
- each R is a carboxylic acid forming group or a sulfuric acid forming group with optionally trace amounts of the corresponding carboxylic acid or sulfuric acid;
- and each R1 is independently selected from substituted phenyl groups, ester groups, polyether groups;
- mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups;
- and r has a value of 0, 1, 2, 3, or 4;
- x has a value of 0, 1 or 2;
- m has a value of 0 to 0.95;
- n has a value of 0.05 to 0.95;
- o has a value of 0 to 0.95;
- p has a value of 0.05 to 0.5;
- q has a value of 0 to 0.95;
- and m+n+o+p+q≈1.
21 more elements
A method comprising
- (a) forming a antireflective coating on a substrate;
- (b) forming a resist coating over the antireflective coating
- (c) exposing the resist to radiation;
- (d) developing the resist and the antireflective coating;
- wherein the antireflective coating is produced from anti-reflective coating composition comprising
- (I) a silsesquioxane resin comprising the units
- (Ph(CH2)rSiO(3-x)/2(OR′)x)m
- (HSiO(3-x)/2(OR′)x)n
- (MeSiO(3-x)/2(OR′)x)o
- (RSiO(3-x)/2(OR′)x)p
- (R1SiO(3-x)/2(OR′)x)q and
- (II) a compound selected from photo-acid generators and thermal acid generators;
- wherein in the silsesquioxane resin Ph is a phenyl group, Me is a methyl group;
- R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms;
- each R is a carboxylic acid forming group or a sulfuric acid forming group and optionally trace amounts of the corresponding carboxylic acid or sulfuric acid;
- and each R1 is independently selected from substituted phenyl groups, ester groups, polyether groups;
- mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups;
- and r has a value of 0, 1, 2, 3, or 4;
- x has a value of 0, 1 or 2;
- m has a value of 0 to 0.95;
- n has a value of 0.05 to 0.95;
- o has a value of 0 to 0.95;
- p has a value of 0.05 to 0.5;
- q has a value of 0 to 0.95;
- and m+n+o+p+q≈1.
22 more elements
A method comprising
- (a) applying an antireflective coating composition comprising a silsesquioxane resin and a thermal acid generator on a substrate;
- (b) thermally curing the antireflective coating composition to produce a wet-etchable antireflective coating.
- (c) forming a resist coating over the antireflective coating;
- (d) exposing the resist to radiation;
- (e) developing the resist and the antireflective coating
- wherein the silsesquioxane resin comprises the units
- (Ph(CH2)rSiO(3-x)/2(OR′)x)m
- (HSiO(3-x)/2(OR′)x)n
- (MeSiO(3-x)/2(OR′)x)o
- (RSiO(3-x)/2(OR′)x)p
- (R1SiO(3-x)/2(OR′)x)q and
- where Ph is a phenyl group, Me is a methyl group;
- R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms;
- each R is a carboxylic acid forming group or a sulfuric acid forming group with optionally trace amounts of the corresponding carboxylic acid or sulfuric acid;
- and R1 is selected from substituted phenyl groups, ester groups, polyether groups;
- mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups;
- and r has a value of 0, 1, 2, 3, or 4;
- x has a value of 0, 1 or 2;
- wherein in the resin m has a value of 0 to 0.90;
- n has a value of 0.05 to 0.99;
- o has a value of 0 to 0.95;
- p has a value of 0.01 to 0.5;
- q has a value of 0 to 0.5;
- and m+n+o+p+q≈1.
21 more elements
A method comprising
- (a) forming an antireflective coating (ARC) on a substrate wherein the ARC composition comprises a silsesquioxane resin and a photo-acid generator;
- optionally (b) exposing the ARC to radiation to produce a wet-etchable antireflective coating;
- (c) forming a resist coating over the antireflective coating;
- (d1) exposing the resist and ARC to radiation;
- or, when (b) is performed, (d2) exposing the resist to radiation;
- (e) developing the resist and the antireflective coating
- wherein the silsesquioxane resin is comprised of the units
- (Ph(CH2)rSiO(3-x)/2(OR′)x)m
- (HSiO(3-x)/2(OR′)x)n
- (MeSiO(3-x)/2(OR′)x)o
- (RSiO(3-x)/2(OR′)x)p
- (R1SiO(3-x)/2(OR′)x)q and
- where Ph is a phenyl group, Me is a methyl group;
- R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms;
- each R is a carboxylic acid forming group or a sulfuric acid forming group with optionally trace amounts of the corresponding carboxylic acid or sulfuric acid;
- and R1 is selected from substituted phenyl groups, ester groups, polyether groups;
- mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups;
- and r has a value of 0, 1, 2, 3, or 4;
- x has a value of 0, 1 or 2;
- wherein in the resin m has a value of 0 to 0.90;
- n has a value of 0.05 to 0.99;
- o has a value of 0 to 0.95;
- p has a value of 0.01 to 0.5;
- q has a value of 0 to 0.5;
- and m+n+o+p+q≈1.
22 more elements
(canceled)
Dependencies are inferred from the claim text.