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US 2011/0236825 A1Published application
Photoresist composition and method of forming photoresist pattern using the same
OwnerJung-In PARK, Hi-Kuk Lee +7inventors
InventorsJung-In PARK, Hi-Kuk Lee, Sang-Hyun Yun, Cha-Dong Kim, Shi-Jin Sung, Sung-Yeol Jin, Sang-Tae Kim, Yong-Il Kim, Eun-Sang Lee
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Abstract
In a photoresist composition suitable for forming a photoresist pattern having a high profile angle, and a method of forming a photoresist pattern using the same, the photoresist composition includes an alkali-soluble resin, a quinone diazide containing compound, a compound represented by Formula 1, and a solvent: wherein R1, R2 and R3 are independently H, C1-4 alkyl, C2-4 alkenyl, C3-8 cycloalkyl, or C6-12 aryl.
Claims17
A photoresist composition comprising:
- an alkali-soluble resin;
- a quinone diazide containing compound;
- a compound represented by Formula 1;
- and
- a solvent:
- wherein R1, R2 and R3 are independently H, C1-4 alkyl, C2-4 alkenyl, C3-8 cycloalkyl, or substituted or unsubstituted C6-12 aryl.
3 more elements
A method for forming a pattern comprising:
- forming a photoresist film by coating a photoresist composition on a pattern forming film, the photoresist composition including an alkali-soluble resin, a quinone diazide containing compound, a compound represented by Formula 1, and a solvent:
- wherein R1, R2 and R3 are independently H, C1-4 alkyl, C2-4 alkenyl, C3-8 cycloalkyl, or substituted or unsubstituted C6-12 aryl;
- exposing the photoresist film by irradiating the photoresist film with light;
- developing the photoresist film to form a photoresist pattern;
- and
- patterning the pattern forming film using the photoresist pattern as an etch mask.
3 more elements
Dependencies are inferred from the claim text.