US 2011/0236598 A1Published application

Film deposition apparatus, film deposition method, and computer readable storage medium

AssigneeTokyo Electron Limited

InventorsTakeshi KUMAGAI, Hitoshi Kato

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Abstract

In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

Claims9

Dependent claims

A film deposition apparatus comprising:

a table that has a substrate receiving area on which a substrate is place and is provided in a vacuum chamber;
a first reaction gas supplying portion that supplies a first reaction gas to be adsorbed on an upper surface of the substrate to a substrate receiving area;
a second reaction gas supplying portion that supplies a second reaction gas that reacts with the first reaction gas adsorbed on the upper surface of the substrate to form a reaction product to the substrate receiving area;
a plasma generation portion that activates an alteration gas into plasma so that an alteration process is carried out with respect to the reaction product on the substrate with the activated alteration gas;
a rotation mechanism that rotates the table relative to the first reaction gas supplying portion, the second reaction gas supplying portion, and the plasma generation portion;
and
a control portion that outputs a control signal so that the film deposition apparatus is caused to perform at least once;
wherein the first reaction gas and the second reaction gas are alternatively supplied to the substrate that is then exposed to the alteration gas activated by the plasma, and
further wherein the alteration gas activated by the plasma is supplied to the substrate, while the first reaction gas is not supplied.

6 more elements

A film deposition method, comprising:

placing a substrate in a substrate receiving portion of a table provided in a vacuum chamber;
and
performing, at least once, a film deposition-alteration step and an alteration step,
wherein within the film deposition-alteration step,
an adsorption step of allowing a first reaction gas to be adsorbed on an upper surface of the substrate,
a reaction product production step of allowing a second reaction gas and the first reaction gas adsorbed on the upper surface of the substrate to react each other, thereby producing a reaction product, and
an alteration process of allowing the upper surface of the substrate to be exposed to plasma into which an alteration gas is activated are performed in this order by rotating a table with a rotation mechanism relative to
a first reaction gas supplying portion,
a second reaction gas supplying portion, and
a plasma generation portion,
wherein the first reaction gas is supplied from the first reaction gas supplying portion, the second reaction gas is supplied from the second reaction gas supplying portion, and the alteration is supplied from the plasma, and
wherein within the alteration step, the alteration gas activated by the plasma is supplied to the substrate in the substrate receiving area while the table is rotated, and the first reaction gas is not supplied.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/070,844Filed 24 Mar 2011
Priority: JP NO. 2010-07590029 Mar 2010
Published: 29 Sep 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

C23C 16/4554
Use of plasma, radiation or electromagnetic fields: plasma being used non-continuously in between ALD reactions
C23C 16/401
Oxides: containing silicon
C23C 16/45536
Characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures…
C23C 16/45551
Having arrangements for gas injection at different locations of the reactor for each ALD half-reaction: for relative movement of the substrate and…

Family

US 8,882,916 B2Related patent
US 2011/0236598 A1This patent

From the US filing history. Foreign family members aren’t listed.

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