Channel Hot Electron Injection Programming Method and Related Device

A nonvolatile memory device for reducing programming current and improving reliability, the nonvolatile memory device comprising:

• a memory cell array comprising memory cells arranged at crossing points of a bit-line and word-line matrix of the memory cell array;
• a write circuit for providing multiple variable pulses to each word-line for programming, wherein the multiple variable pulses have predetermined amplitude for keeping gate injection current at a predetermined level during programming operation;
• and
• a verification circuit for sensing variation of the conduction current during the programming operation, and disabling the programming operation if the sensed conduction current during the programming operation reaches a predetermined value.

A method of programming a nonvolatile memory cell, the method comprising:

• applying a word line voltage to a word line input of the nonvolatile memory cell;
• applying a bit line voltage to a bit line input of the nonvolatile memory cell;
• sensing conduction current of the nonvolatile memory cell;
• and
• increasing the word line voltage applied to the word line input of the nonvolatile memory cell after the conduction current reaches a predetermined value.