Non-volatile semiconductor storage device

A non-volatile semiconductor storage device comprising:

• a plurality of non-volatile memory cells formed in a first region of a semiconductor substrate;
• and
• a drive circuit formed in a second region of the semiconductor substrate,
• wherein each of the plurality of memory cells has:
• (a) first and second semiconductor regions formed in the semiconductor substrate;
• (b) a first conductive layer and a second conductive layer formed on the semiconductor substrate between the first and second semiconductor regions, the first conductive layer being positioned on a first semiconductor region side, the second conductive layer being positioned on a second semiconductor region side;
• (c) a first insulating film formed between the first conductive layer and the semiconductor substrate;
• and
• (d) a charge accumulating region made of a second insulating film formed between the second conductive layer and the semiconductor substrate,
• the drive circuit controls voltages applied to the first region of the semiconductor substrate, the first semiconductor region, the second semiconductor region, the first conductive layer and the second conductive layer, thereby carrying out a writing operation by hot electron injection using a source side injection method and carrying out an erasing operation by a hot hole injection method utilizing a band-to-band tunneling phenomenon, and
• a negative voltage is applied to the first region of the semiconductor substrate in the writing operation.