Device and method to read data subject to a disturb condition

A memory storage device comprising:

• a plurality of memory elements;
• and
• a controller configured to:
• receive a first value corresponding to first data stored at a first memory element of the plurality of memory elements;
• receive a second value corresponding to second data stored at a second memory element of the plurality of memory elements;
• and
• generate an estimation of particular data stored at a particular memory element of the plurality of memory elements based at least partially on the first value and the second value, wherein the estimation is generated by classifying a combination of at least the first value and the second value into a particular class of a group of at least two classes, wherein at least one class of the group indicates that the particular memory element is prone to a disturb error.

A non-volatile memory device comprising:

• memory elements;
• a read circuit configured to read memory states of a first plurality of the memory elements, wherein each of the first plurality of the memory elements is adjacent to addressed memory elements of the memory elements, wherein a memory state of each addressed memory element is associated with at least one corresponding memory element of the first plurality of the memory elements;
• and
• a controller configured to, for each particular addressed memory element:
• classify joint states comprising states of those memory elements of the first plurality of memory elements that are associated with the particular addressed memory element into a particular class of at least two classes by matching the joint states to a particular pattern of values corresponding to the particular class, wherein one of the at least two classes is associated with a correlation of the particular addressed memory element to a disturb error;
• and
• provide a data value of the particular addressed memory element in accordance with the particular class.

A database device comprising:

• memory elements;
• a read circuit configured to read memory states of each memory element of a group of the memory elements, wherein each memory element of the group of the memory elements is adjacent to a particular memory element that is addressed and wherein a memory state of the particular memory element is associated with each memory element of the group of the memory elements;
• and
• a controller configured to, for the particular memory element:
• classify joint states of the memory elements of the group of memory elements into a particular class of at least two classes, wherein a first class of the at least two classes indicates a correlation between the particular memory element and a disturb condition;
• and
• adjust a reliability measure associated with data stored in the particular memory element in accordance with the particular class.