Solid-state image taking device and electronic apparatus

A solid-state image taking device comprising:

• a pixel section including a plurality of unit pixels laid out to form a pixel matrix and to serve as unit pixels which have read sections and are each provided with a pixel opening prescribed by an optical-path limiting section provided on a semiconductor substrate and with an opto-electric conversion section as well as an electric-charge holding section;
• and
• a scan driving section configured to control an operation to transfer electric charge from said opto-electric conversion section to said electric-charge holding section at the same time for said unit pixels in a pixel area determined in advance in said pixel matrix and to scan and drive said read sections in one scan direction of a scan operation, wherein
• on each pixel column including said unit pixels laid out in said scan direction, said opto-electric conversion section and said electric-charge holding section are laid out alternately and repeatedly, and
• in each of said unit pixels on each of said pixel columns, said electric-charge holding section is placed on a start side of said scan operation whereas said opto-electric conversion section is placed on an end side of said scan operation.

An electronic apparatus comprising an image processing section and an image input section including an optical system having a solid-state image taking device employing:

• a pixel section including a plurality of unit pixels laid out to form a pixel matrix as unit pixels which have read sections and are each provided with a pixel opening prescribed by an optical-path limiting section created on a semiconductor substrate and with an opto-electric conversion section as well as an electric-charge holding section;
• and
• a scan driving section configured to control an operation to transfer electric charge from said opto-electric conversion section to said electric-charge holding section at the same time for all said unit pixels in said pixel matrix and to scan and drive said read sections in one scan direction, wherein
• on each pixel column including said unit pixels laid out in said scan direction, said opto-electric conversion section and said electric-charge holding section are laid out alternately and repeatedly;
• and
• on each of said pixel columns, two said electric-charge holding sections of two adjacent ones of said unit pixels are laid out disproportionately toward one side of said scan direction with respect to said optical-path limiting section or said opto-electric conversion section.

A solid-state image taking device comprising:

• pixel means including a plurality of unit pixels laid out to form a pixel matrix and to serve as unit pixels which have read sections and are each provided with a pixel opening prescribed by an optical-path limiting section created on a semiconductor substrate and with an opto-electric conversion section as well as an electric-charge holding section;
• and
• scan driving means for controlling an operation to transfer electric charge from said opto-electric conversion section to said electric-charge holding section at the same time for said unit pixels in a pixel area determined in advance in said pixel matrix and for scanning and driving said read sections in one scan direction, wherein
• on each pixel column included in said pixel area determined in advance to serve as a pixel column having said unit pixels laid out in said scan direction, said opto-electric conversion section and said electric-charge holding section are laid out alternately and repeatedly, and
• on each of said pixel columns in said pixel area determined in advance, two said electric-charge holding sections of two adjacent ones of said unit pixels are laid out disproportionately toward one side of said scan direction with respect to said optical-path limiting section or said opto-electric conversion section.

A solid-state image taking device comprising:

• pixel means including a plurality of unit pixels laid out to form a pixel matrix and to serve as unit pixels which have read sections and are each provided with a pixel opening prescribed by an optical-path limiting section provided on a semiconductor substrate and with an opto-electric conversion section as well as an electric-charge holding section;
• and
• scan driving means for controlling an operation to transfer electric charge from said opto-electric conversion section to said electric-charge holding section at the same time for said unit pixels in a pixel area determined in advance in said pixel matrix and for scanning and driving said read sections in one scan direction of a scan operation, wherein
• on each pixel column including said unit pixels laid out in said scan direction, said opto-electric conversion section and said electric-charge holding section are laid out alternately and repeatedly, and
• in each of said unit pixels on each of said pixel columns, said electric-charge holding section is placed on a start side of said scan operation whereas said opto-electric conversion section is placed on an end side of said scan operation.