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AssigneeASML Netherlands B.V.
InventorsSander Frederik Wuister, Vadim Yevgenyevich Banine, Arie Jeffrey Den Boef, Yvonne Wendela Kruijt-Stegeman, Tatyana Viktorovna Rakhimova, Dmitriy Viktorovich Lopaev, Denis Alexandrovich Glushkov, Andrei Mikhailovich Yakunin, Roelof Koole
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An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.
An imprint lithography method comprising, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium:
An imprint lithography method comprising, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium:
Dependencies are inferred from the claim text.