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US 2011/0226725 A1Published application
Pattern forming method
AssigneeKabushiki Kaisha Toshiba
InventorTakashi OHASHI
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Abstract
A pattern forming method including: (a) forming a porous layer above an etching target layer; (b) forming an organic material with a transferred pattern on the porous layer; (c) forming, by use of the transferred pattern, a processed pattern in a transfer oxide film that is more resistant to etching than the porous layer; and (d) transferring the processed pattern to the etching target layer by use of the transfer oxide film as a mask.
Claims15
A pattern forming method comprising:
- (a) forming a porous layer above an etching target layer;
- (b) forming an organic material with a transferred pattern on the porous layer;
- (c) forming, by use of the transferred pattern, a processed pattern in a transfer oxide film that is more resistant to etching than the porous layer;
- and
- (d) transferring the processed pattern to the etching target layer by use of the transfer oxide film as a mask.
2 more elements
Dependencies are inferred from the claim text.