Polishing Composition and Polishing Method Using The Same
AssigneeFujimi Incorporated
InventorsShuhei TAKAHASHI, Hitoshi MORINAGA
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Abstract
A polishing composition is disclosed containing a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, a basic compound, and water. The nonionic active agent is preferably an oxyalkylene homopolymer or a copolymer of different oxyalkylenes. The polishing composition may further contain at least one of silicon dioxide and a water-soluble polymer. The polishing composition is used, for example, in polishing the surface of semiconductor substrates such as silicon wafers.
Claims20
A polishing composition comprising a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, a basic compound, and water.
A polishing composition comprising:
- a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, the nonionic active agent being an oxyalkylene homopolymer or a copolymer of different oxyalkylenes that contains oxyethylene units in a proportion of not less than 85% by mass;
- a basic compound;
- silicon dioxide;
- a water-soluble polymer;
- and
- water.
A method of processing a semiconductor substrate, the method comprising:
- preparing a polishing composition containing a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, a basic compound, and water;
- and
- polishing a surface of the semiconductor substrate using the polishing composition.
Dependencies are inferred from the claim text.