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US 2011/0217824 A1Published application
Electrode structure, method of fabricating the same, and semiconductor device
AssigneeElpida Memory, Inc.
InventorMasahiko OHUCHI
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes the following processes. A first groove is formed in a first insulating film. A first conductive film is formed on inner surfaces of the first groove. A second groove is formed in the first insulating film to remove a part of the first conductive film. The second groove intersects the first groove.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a first groove in a first insulating film;
- forming a first conductive film on inner surfaces of the first groove;
- and
- forming a second groove in the first insulating film to remove a part of the first conductive film, the second groove intersecting the first groove.
1 more element
A method for fabricating a semiconductor device, the method comprising:
- forming a first groove in a first insulating film;
- forming a first conductive film on inner surfaces of the first groove;
- and
- forming second and third grooves in the first insulating film to define the first conductive film into an electrode, the second and third grooves intersecting the first groove.
1 more element
A method for fabricating a semiconductor device, the method comprising:
- forming a first insulating film over a semiconductor substrate;
- forming a first groove in the first insulating film, the first groove extending in a first direction;
- forming a first conductive film on a bottom surface and side surfaces of the first groove;
- and
- forming a second groove in the first insulating film to remove a part of the first conductive film and to define an electrode, the second groove extending in a second direction, the second groove intersecting the first groove.
2 more elements
Dependencies are inferred from the claim text.