Method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTakuji KUNIYA
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Abstract
According to one embodiment, a method is described for manufacturing a semiconductor device. The method can form a conductive layer including tungsten on a foundation layer. The method can form a trench by selectively etching the conductive layer. The trench is shallower than a depth from a surface of the conductive layer to the foundation layer. The method can form a protective film on a side surface and a bottom surface of the conductive layer in the trench using a gas containing bromine. The protective film includes a compound of the tungsten and the bromine. The method can remove the protective film on the bottom surface of the conductive layer. The method can etch a portion of the conductive layer below the trench with the protective film on the side surface of the conductive layer.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a conductive layer including tungsten on a foundation layer;
- forming a trench by selectively etching the conductive layer, the trench being shallower than a depth from a surface of the conductive layer to the foundation layer;
- after the forming of the trench, forming a protective film on a side surface and a bottom surface of the conductive layer in the trench using a gas containing bromine, the protective film including a compound of the tungsten and the bromine;
- removing the protective film on the bottom surface of the conductive layer;
- and
- after the removing of the protective film on the bottom surface of the conductive layer, etching a portion of the conductive layer below the trench with the protective film on the side surface of the conductive layer.
Dependencies are inferred from the claim text.