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AssigneeSumitomo Electric Industries, Ltd.
InventorTaro NISHIGUCHI
Estimating the term…
A method of manufacturing SiC crystal includes the following steps. A manufacturing apparatus including a crucible having a main body portion and a heat insulating material covering the main body portion is prepared. In the main body portion, seed crystal is arranged opposed to a source material. The source material is heated to sublime and a source gas is precipitated on the seed crystal, to thereby grow SiC crystal. The step of preparing the manufacturing apparatus includes the step of arranging a heat radiation portion higher in thermal conductivity than the heat insulating material on a side of an outer surface of the main body portion on a side of seed crystal and covering the entire outer surface of the main body portion on the side of the seed crystal with the heat radiation portion or with the heat radiation portion and the heat insulating material.
A method of manufacturing silicon carbide crystal, comprising the steps of:
A crucible used for manufacturing SiC crystal, comprising:
A silicon carbide crystal manufacturing apparatus for growing silicon carbide crystal by causing a source material containing silicon carbide to sublime and precipitating a source gas resulting from sublimation on seed crystal, comprising:
Dependencies are inferred from the claim text.