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US 2011/0215482 A1Published application
Semiconductor device
AssigneeRohm Co., Ltd.
InventorsSatoshi Kageyama, Yuichi Nakao
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Abstract
The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.
Claims12
A semiconductor device comprising:
- a semiconductor layer;
- an interlayer dielectric film formed on the semiconductor layer;
- a Cu wire formed on the interlayer dielectric film to have a width of not more than 0.4 μm;
- and
- a broad portion integrally formed with the Cu wire to extend from the Cu wire in the width direction thereof.
2 more elements
5-10. (canceled)
Dependencies are inferred from the claim text.